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2SB709A - Silicon Epitaxial Planar Transistor

Features

  • High forward current transfer ratio hFE.
  • Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A.

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Full PDF Text Transcription

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS  For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No. Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage Temperature -45 -45 -7 -200 -100 200 -55 to +150 Units V V V mA mA mW ℃ C015 Rev.A www.gmesemi.
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