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2SB624 - Silicon Transistor

Features

  • High DC current gain. hFE: 200TYP (VCE=-1.0V,IC=-100mA).
  • Complimentary to the 2SD596. Pb Lead-free 2SB624.

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Full PDF Text Transcription

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS  Audio frequency amplifier.  Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -25 -5 IC Collector Current -Continuous -700 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C014 Rev.A www.gmesemi.
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