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2SB1375 - Silicon PNP Transistor

Key Features

  • Low Saturation Voltage:VCE(sat)=-1.5V(max. ) (IC/IB=-2A/-0.2A) Pb.
  • High Power Dissipation:PC=25W(TC=25℃) Lead-free.
  • Complements the 2SD2012. Production specification 2SB1375 TO-220AB.

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Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb  High Power Dissipation:PC=25W(TC=25℃) Lead-free  Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -60 V -7 V -3 A -0.5 A 2.0 W 25 -55 to +150 ℃ X015 Rev.A www.gmesemi.