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2SA733 - Silicon Epitaxial Planar Transistor

Features

  • Excellent hFE Linearity.
  • Power dissipation：PD=250mW.
  • High hFE. Pb Lead-free 2SA733.

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Full PDF Text Transcription

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE Linearity.  Power dissipation：PD=250mW.  High hFE. Pb Lead-free 2SA733 APPLICATIONS  Designed for use in driver stage of amplifier. ORDERING INFORMATION Type No. Marking 2SA733 CS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -60 -50 -5 -100 PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 250 -55 to +150 Units V V V mA mW ℃ C009 Rev.A www.gmesemi.
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