2PD601AW - NPN Transistor

Galaxy Microelectronics

Key Features

Collector Current. (IC= 100mA）.
Excellent HFE Linearity.
Power dissipation. (PC=200mW) Pb Lead-free.

2PD601AW npn transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2PD601AW
Manufacturer	Galaxy Microelectronics
File Size	114.76 KB
Description	NPN Transistor
Datasheet	2PD601AW Datasheet

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NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 100mA）  Excellent HFE Linearity.  Power dissipation.(PC=200mW) Pb Lead-free APPLICATIONS  General purpose application. Production specification 2PD601AW ORDERING INFORMATION Type No. Marking 2PD601AW 6D/6E/6F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F028 Rev.A www.gmesemi.