2N6107
Key Features
- z DC Curent Gain Specified to 7A
- Collector-Emitter Sustaining Voltage
- 65 to +150 ℃ X029 Rev.A .gmicroelec. 1 Production specification PNP Epitaxial Silicon Transistor 2N6107
- Part: 2N6107
- Description: PNP Epitaxial Silicon Transistor
- Category: Transistor
- Manufacturer: Galaxy Microelectronics
- Size: 207.57 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6107 | Continental Device India | PLASTIC POWER TRANSISTORS |
| 2N6107 | Semelab | HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS |
| 2N6104 | Unknown Manufacturer | RF POWER TRANSISTORS |
| 2N6105 | Unknown Manufacturer | RF POWER TRANSISTORS |
| 2N6106 | Inchange Semiconductor | PNP Transistor |
| 2N6109 | Inchange Semiconductor | PNP Transistor |
| 2N6101 | Inchange Semiconductor | NPN Transistor |
| 2N6103 | Inchange Semiconductor | NPN Transistor |
| 2N6108 | Inchange Semiconductor | PNP Transistor |
| 2N6102 | Inchange Semiconductor | NPN Transistor |