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GME

1SS352 Datasheet Preview

1SS352 Datasheet

Silicon Epitaxial Planar Diode

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Silicon Epitaxial Planar Diode
FEATURES
z Small package
z Low forward voltage
z Fast reverse recovery time
z Small total capacitance
Pb
Lead-free
Production specification
1SS352
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS352
C1
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Limits
Peak reverse voltage
DC Reverse Voltage
Average Rectified Output Current
Surge current(10ms)
Power Dissipation
Junction temperature
Storage temperature
VRM
VR
IO
IFSM
PD
Tj
TSTG
85
80
100
1
200
125
-55 to +125
Unit
V
V
mA
A
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
B053
Rev.A
www.gmicroelec.com
1




GME

1SS352 Datasheet Preview

1SS352 Datasheet

Silicon Epitaxial Planar Diode

No Preview Available !

Silicon Epitaxial Planar Diode
Parameter
Forward voltage
Reverse current
Total Capacitance
Reverse recovery time
Symbol
VF
IR
CT
trr
Conditions
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0,f=1MHz
IF=10mA
Production specification
1SS352
Min.
-
-
-
-
-
Typ.
0.62
0.75
0.98
-
-
0.5
Max.
-
-
1.2
0.1
0.5
3.0
1.6 4.0
Unit
V
uA
pF
ns
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
PACKAGE OUTLINE
B053
Rev.A
www.gmicroelec.com
2


Part Number 1SS352
Description Silicon Epitaxial Planar Diode
Maker GME
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1SS352 Datasheet PDF






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