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0809LD30 Datasheet 30 Watt / 28V / 1 Ghz LDMOS FET

Manufacturer: GHZ Technology

Datasheet Details

Part number 0809LD30
Manufacturer GHZ Technology
File Size 16.94 KB
Description 30 Watt / 28V / 1 Ghz LDMOS FET
Datasheet download datasheet 0809LD30 Datasheet

General Description

The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz.

The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.

CASE OUTLINE 55QT Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 110 W 1.6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL ΒVdss Idss Igss Vgs(th) Vds(on) gFS Ciss Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 10ma Vgs = 10V, Id = 2A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 1.0 1.4 60 2.5 32 MIN 65 TYP 70 1 1 5 MAX UNITS V A A V V S pF pF pF FUNCTIONAL CHARACTERISTICS @ 25°C GPS ηd IMD3 Common Source Power Gain Drain Efficiency Intermodulation Distortion, 3rd Order Load Mismatch Vds = 28V, Idq = 0.15A, F = 900MHz, Pout = 30W Vds = 28V, Idq = 0.15A, F = 900MHz, Pout = 30W Vds = 28V, Idq = 0.3A, Pout =30WPEP, F1 = 900 MHz, F2 = 900.1 MHz Vds = 28V, Idq = 0.15A, F = 900MHz, Pout = 30W 14 50 -30 dB % dBc Ψ 10:1 GHz TECHNOLOGY INC.

Overview

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY.