G1003A datasheet, mosfet equivalent, GFD

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Features and benefits

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 120mΩ < 130mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>6KV Schema.

Application

General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 120mΩ < 130m.

Description

The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 1.

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