7N60F mosfet equivalent, 600v n-channel mosfet.
* 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V
* Low gate charge ( typical 29nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Orderin.
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high effic.
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