740 datasheet, mosfet equivalent, GFD

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Features and benefits

* 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
* Low gate charge ( typical 30nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Ord.

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanch.

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