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GFD

630A Datasheet Preview

630A Datasheet

MOSFET

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GOFORD
Description
Features
VDSS RDS(ON)
@ 10V (typ)
200V 0.21
ID
9A
Fast switching
100% avalanche tested
Improved dv/dt capability
Application
DC Motor Control and Class D Amplifier
Uninterruptible Power Supply (UPS)
Automotive
630A
TO-252
TO-251
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
IDM
EAS
dv/dt
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current note1
Single Pulsed Avalanche Energy note2
Peak Diode Recovery Energy note3
TC = 25
TC = 100
Power Dissipation
PD
Linear Derating Factor
TC = 25
TC > 25
RθJC Thermal Resistance, Junction to Case
TJ, TSTG
Operating and Storage Temperature Range
*Drain current limited by maximum junction temperature
Max.
TO-251/TO-252
200
± 30
9
5.83
36
320
5
83
0.67
1.5
-55 to +150
Units
V
V
A
A
A
mJ
V/ns
W
W/
/W
HTTP://www.gofordsemi.com TEL0755-29961262 FAX0755-29961466
Page 1




GFD

630A Datasheet Preview

630A Datasheet

MOSFET

No Preview Available !

GOFORD
630A
Electrical Characteristics TC=25unless otherwise specified
Symbol
Parameter
Off Characteristic
V(BR)DSS
V(BR)DSS
/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Body Leakage Current
On Characteristics
VGS(th)
Gate Threshold Voltage note4
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain(“Miller”) Charge
Test Condition
VGS = 0V,ID = 250µA
Reference to 25,
ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125
VDS = 0V, VGS = ±30V
VDS = VGS, ID = 250µA
VGS =10V, ID = 4.5A
VDS =30V, ID = 4.5A
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDD = 160V, ID = 9A,
VGS = 10V
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 100V, ID = 9A,
RG = 10, VGS = 10V
tf Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = 9A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IF = 9A,
di/dt =100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 9A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse width 300µs; duty cycle 2%.
Min. Typ. Max.
200 -
-
- 0.25 -
--1
- - 10
- - ±100
1 1.8 2.5
- 0.21 0.25
- 9.2
-
- 509
- 51.5
- 3.2
- 11.8
- 2.36
- 3.98
-
-
-
-
-
-
- 10.33
- 10.7
- 29.1
- 11.1
-
-
-
-
-- 9
- - 36
- - 1.4
- 201 -
- 663 -
Units
V
V/
µA
µA
nA
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
HTTP://www.gofordsemi.com TEL0755-29961262 FAX0755-29961466
Page 2


Part Number 630A
Description MOSFET
Maker GFD
PDF Download

630A Datasheet PDF






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