3205TR
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
Parameter
3205TR
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25℃
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
55
108
450
150
1.00
± 20
780
5.0
-55 to 175
V
A
W
W/℃
V
mJ
V/ns
℃
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Min. Typ. Max. Units Test Conditions
Junction-to-Case
Water cooled heatsink, PD adjusted for
-- -- 0.65 ℃/W a peak junction temperature of +175℃.
Junction-to-Ambient -- -- 62
1 cubic foot chamber, free air.
OFF Characteristics TJ=25℃ unless otherwise specified
Symbol
BVDSS
I GSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
5
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
±100 nA VDS=0V, VGS=±20V
I D SS
Zero Gate Voltage Drain Current
--
--
1 uA VDS=55V, VGS=0V
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static
On-Resistance
Min. Typ. Max Units Test Conditions
Drain-to-Source
-- 6.6 8 mΩ VGS=10V,ID=62A
Gate Threshold Voltage, Figure 12. 3 -- 5 V VDS=VGS, ID=250uA
Gfs Forward Transconductance
-- 81 --
V VDS=15V, ID=58A
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