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3205TR Datasheet Preview

3205TR Datasheet

N-Channel MOSFETS

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N-Channel MOSFETS
DESCRIPTION
The OGFD 3205TR is the N-Channel logic
enhancement mode Power field effect transistors
are produced using high cell density trench
technology. This high density process is especially
tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Applications
• witching Application Systems
• Inverter systems
• DC Motor Control
3205TR
VDS
55V
RDS(ON)
ID
6.6mΩ
108A
Ordering Information
PART NUMBER PACKAGE
BRAND
3205TR
TO-220
OGFD
www.goford.cn TEL0755-86350980 FAX0755-86350963




GFD

3205TR Datasheet Preview

3205TR Datasheet

N-Channel MOSFETS

No Preview Available !

3205TR
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Symbol
Parameter
3205TR
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
55
108
450
150
1.00
± 20
780
5.0
-55 to 175
V
A
W
W/
V
mJ
V/ns
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Min. Typ. Max. Units Test Conditions
Junction-to-Case
Water cooled heatsink, PD adjusted for
-- -- 0.65 /W a peak junction temperature of +175.
Junction-to-Ambient -- -- 62
1 cubic foot chamber, free air.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
5
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
±100 nA VDS=0V, VGS=±20V
I D SS
Zero Gate Voltage Drain Current
--
--
1 uA VDS=55V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static
On-Resistance
Min. Typ. Max Units Test Conditions
Drain-to-Source
-- 6.6 8 mΩ VGS=10V,ID=62A
Gate Threshold Voltage, Figure 12. 3 -- 5 V VDS=VGS, ID=250uA
Gfs Forward Transconductance
-- 81 --
V VDS=15V, ID=58A
www.goford.cn TEL0755-86350980 FAX0755-86350963


Part Number 3205TR
Description N-Channel MOSFETS
Maker GFD
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3205TR Datasheet PDF






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