3205TR Datasheet | GFD

N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Applications - witching Application Systems - Inverter systems - DC Motor Control 55V RDS(ON) 6.6mΩ 108A Ordering Information PART NUMBER PACKAGE BRAND TO-220 OGFD .goford.cn TEL：0755-86350980 FAX：0755-86350963...