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3205PL Datasheet Preview

3205PL Datasheet

N-Channel MOSFETS

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N-Channel MOSFETS
DESCRIPTION
The OGFD 3205PL is produced using advanced
planar stripe DMOS technology. The advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switched mode
power supplies, active power factor correction based
on half bridge topology.
3205PL
BVDSS RDS(ON) ID
55V 0.008 Ω 110A
Features:
• RoHS Compliant
• Low RDS(ON) (Max 0.008Ω) VGS=10V
• Low Gate Charge
• 100% avalanche tested
• Fast switching
• Improved dv/dt capability.
• Fast switching
Applications
• Switching Application Systems
• Inverter systems
• DC Motor Control
Ordering Information
PART NUMBER PACKAGE BRAND
3205PL
TO-220
0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963




GFD

3205PL Datasheet Preview

3205PL Datasheet

N-Channel MOSFETS

No Preview Available !

3205PL
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Symbol
Parameter
3205PL
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
55
110
350
200
1.30
± 20
519
5.0
-55 to 150
V
A
W
W/
V
mJ
V/ns
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Min. Typ. Max. Units Test Conditions
Junction-to-Case
Water cooled heatsink, PD adjusted for
-- -- 0.75 /W a peak junction temperature of +175.
Junction-to-Ambient -- -- 40
1 cubic foot chamber, free air.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
55
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
±100 nA VDS=0V, VGS=±20V
I D SS
Zero Gate Voltage Drain Current
--
--
1 uA VDS=55V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
Parameter
Static
On-Resistance
Min.
Drain-to-Source
--
Typ.
--
Uni
Max Test Conditions
ts
0.008 Ω VGS=10V,ID=59A
VGS(TH)
Gate Threshold Voltage, Figure 12. 2.0
--
4.0 V VDS=10V, ID=250uA
Gfs Forward Transconductance
106 ---
-- V VDS=25V, ID=60A
www.goford.cn TEL0755-86350980 FAX0755-86350963


Part Number 3205PL
Description N-Channel MOSFETS
Maker GFD
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3205PL Datasheet PDF






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