3205PL - N-Channel MOSFETS

General Description

The OGFD 3205PL is produced using advanced planar stripe DMOS technology.

The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

RoHS Compliant.
Low RDS(ON) (Max 0.008Ω) VGS=10V.
Low Gate Charge.
100% avalanche tested.
Fast switching.
Improved dv/dt capability.
Fast switching.

📥 Download Datasheet

3205PL n-channel mosfets by GFD - Datasheet Preview

Datasheet Details

Part number	3205PL
Manufacturer	GFD
File Size	450.75 KB
Description	N-Channel MOSFETS
Datasheet	3205PL Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
3205	Power MOSFET	ETC
320-LA20	V320LA20	Littelfuse
3202	200 V - 1/000 V Three Phase Bridge	ETC
3202F	200 V - 1/000 V Three Phase Bridge	ETC
3202UF	200 V - 1/000 V Three Phase Bridge	ETC

Other Datasheets by GFD

Part Number	Description
3205TR	N-Channel MOSFETS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel MOSFETS DESCRIPTION The OGFD 3205PL is produced using advanced planar stripe DMOS technology. The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 3205PL BVDSS RDS(ON) ID 55V 0.008 Ω 110A Features: • RoHS Compliant • Low RDS(ON) (Max 0.008Ω) VGS=10V • Low Gate Charge • 100% avalanche tested • Fast switching • Improved dv/dt capability.