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2302 Datasheet Preview

2302 Datasheet

N-Channel Enhancement Mode Power MOSFET

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2302
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The 2302 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS = 20V,ID = 2.9A
RDS(ON) < 59m@ VGS=2.5V
RDS(ON) < 45m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D
G
S
Schematic diagram
3D
2302
G1
2S
Marking and pin Assignment
Application
Battery protection
Load switch
Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2302
2302
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±10
2.9
10
1
-55 To 150
125
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
www.goford.cn TEL0755-86350980 FAX0755-86350963
Page 1




GFD

2302 Datasheet Preview

2302 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=2.5A
VGS=4.5V, ID=2.9A
VDS=5V,ID=2.9A
VDS=10V,VGS=0V,
F=1.0MHz
VDD=10V,ID=2.9A
VGS=4.5V,RGEN=6
VDS=10V,ID=2.9A,
VGS=4.5V
VGS=0V,IS=2.9A
2302
- - ±100 nA
0.5 0.75
- 37
- 30
-8
1.2
59
45
-
V
m
m
S
- 300
- 120
- 80
-
-
-
PF
PF
PF
- 10
- 50
- 17
- 10
- 4.0
- 0.65
- 1.2
15
85
45
20
10
-
-
nS
nS
nS
nS
nC
nC
nC
- 0.75 1.2
- - 2.9
V
A
www.goford.cn TEL0755-86350980 FAX0755-86350963
Page 2


Part Number 2302
Description N-Channel Enhancement Mode Power MOSFET
Maker GFD
PDF Download

2302 Datasheet PDF






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