1404TR
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
Parameter
1404TR
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25℃
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
40
190
750
220
1.47
± 20
1400
5.0
-55 to 175
V
A
W
W/℃
V
mJ
V/ns
℃
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Min. Typ. Max. Units Test Conditions
Junction-to-Case
Water cooled heatsink, PD adjusted for
-- -- 0.68 ℃/W a peak junction temperature of +175℃.
Junction-to-Ambient -- -- --
1 cubic foot chamber, free air.
OFF Characteristics TJ=25℃ unless otherwise specified
Symbol
BVDSS
I GSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
40
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
±100 nA VDS=0V, VGS=±20V
I D SS
Zero Gate Voltage Drain Current
--
--
1 uA VDS=40V, VGS=0V
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static
On-Resistance
Min.
Drain-to-Source
--
Gate Threshold Voltage, Figure 12. 2.0
Typ.
--
--
Max Units Test Conditions
4 mΩ VGS=10V,ID=40A
4.0 V VDS=10V, ID=250uA
Gfs Forward Transconductance
170 ---
-- S VDS=50V, ID=75A
www.goford.cn TEL：0755-86350980 FAX：0755-86350963
