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12N60F Datasheet Preview

12N60F Datasheet

600V N-Channel MOSFET

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600V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS
technology.This advanced technology has
been especially tailored tominimize on-state
resistance, provide superior switching
performance, and withstand high energy
pulse in the avalanche and commutation
mode. These devices are well suited for high
efficiency switched mode power supplies,
active power factor correction based on half
bridge topology.
12N60/12N60F
VDSS RDS(ON)
ID
600V 0.65Ω
12A
Features
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 52nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
12N60/12N60F TO-220/220F 0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963




GFD

12N60F Datasheet Preview

12N60F Datasheet

600V N-Channel MOSFET

No Preview Available !

12N60/12N60F
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
12N60
12N60F
VDSS
ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
600
12 12
7.4 7.4
IDM Drain Current- Pulsed
(Note 1)
48
48
VGSS
Gate-Source Voltage
± 30
EAS
Single Pulsed Avalanche Energy
(Note 2)
865
Units
V
A
A
A
V
mJ
EAR Repetitive Avalanche Energy
(Note 1)
23.1
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,
1/8" from case for 5 seconds
231
1.85
54
0.43
-55 to +150
300
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
12N60
12N60F
Units
RθJC
Thermal Resistance, Junction-to-Case
0.54
2.33
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5 -- °C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
www.goford.cn TEL0755-86350980 FAX0755-86350963


Part Number 12N60F
Description 600V N-Channel MOSFET
Maker GFD
PDF Download

12N60F Datasheet PDF






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