12N60F mosfet equivalent, 600v n-channel mosfet.
*12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
* Low gate charge ( typical 52nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Orderi.
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .
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