120N03 mosfet equivalent, mosfet.
� VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ )
� High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Goo.
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120N03
VDS
30V
RDS(ON)
ID
2.5mΩ 120A
GENERAL FEATURES
� VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:.
The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
120N03
VDS
30V
RDS(ON)
ID
2.5mΩ 120A
GENERAL FEATURES
� VDS = 30 V, ID = 120 A RDS(ON).
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