GE4953 datasheet, transistor equivalent, GEMOS

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Features and benefits

* VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
*.

Application

requiring a wide range of gave drive voltage ratings (4.5V
– 25V). GENERAL FEATURES
* VDS = -30V,ID .

Description

The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
– 25V). GENERAL FEATURES
.

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