Datasheet4U Logo Datasheet4U.com

IRFF423 - FIELD EFFECT POWER TRANSISTOR

Download the IRFF423 datasheet PDF. This datasheet also covers the IRFF422 variant, as both devices belong to the same field effect power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFF422-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRFF423
Manufacturer GE
File Size 187.84 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRFF423 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~D~[?~ IRFF422,423 FIELD EFFECT POVVER TRANSISTOR 1.4 AMPERES 500, 450 VOLTS RDS(ON) = 4.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Published: |