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IGT8D20 Datasheet, GE

IGT8D20 transistor equivalent, insulated gate bipolar transistor.

IGT8D20 Avg. rating / M : 1.0 rating-13

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IGT8D20 Datasheet

Features and benefits


* Low VCE(SAT) - 2.3V typ @ 20A
* Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 2.

Application

operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power sup.

Image gallery

IGT8D20 Page 1 IGT8D20 Page 2 IGT8D20 Page 3

TAGS

IGT8D20
Insulated
Gate
Bipolar
Transistor
IGT8D21
IGT8E20
IGT8E21
GE

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