GE3055P transistor equivalent, npn power transistor.
* High gain at high current:
hFE =20 -100 @ VCE =4V, IC =4A
* Low saturation voltage:
VCE(sat) < 1.1V @ IC =4A, IS =OAA
NPN COLLECTOR
EMITTER
CASE STYLE TO-247S.
Features:
* High gain at high current:
hFE =20 -100 @ VCE =4V, IC =4A
* Low saturation voltage:
VCE(sat) < 1.1V.
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