D84BM2 Datasheet - GE

D84BM2 FIELD EFFECT POWER TRANSISTOR

~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D84BM2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D84BM2 Datasheet (193.06 KB)

D84BM2 Datasheet Preview — Preview of D84BM2 PDF

Datasheet Details

Part number:

D84BM2

Manufacturer:

File Size:

193.06 KB

Description:

Field effect power transistor.

📁 Related Datasheet

D84BK2 FIELD EFFECT POWER TRANSISTOR (GE)

D84BL2 FIELD EFFECT POWER TRANSISTOR (GE)

D84BN2 FIELD EFFECT POWER TRANSISTOR (GE)

D84BQ1 FIELD EFFECT POWER TRANSISTOR (GE)

D84BQ2 FIELD EFFECT POWER TRANSISTOR (GE)

D8407N Rectifier Diode (Infineon)

D844 2SD844 (SavantIC)

D845 2SD845 (Savant IC)

TAGS

D84BM2 FIELD EFFECT POWER TRANSISTOR GE

D84BM2 Distributor