CDP1823 Datasheet Preview

CDP1823 Datasheet

128-Word x 8-Bit Static Random-Access Memory

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Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

CDP1823, CDP1823C

BLlS 0

eus I

BUS 2

BUS 3

BuS 4

BUS 5- 6

BUS 6

8US 7

CSI 9 16

CS2

"c.53

V55 12

1" 3

TOP VIEW

VDD

MAO

MAl

MA2

MA3

MA'

MA5

MAS

MWR

-Mmi

ess

C54

TERMINAL ASSIGNMENT

128-Word X 8-Bit Static

Random-Access Memory

Features:

• Fast access time:

450 ns at Voo= 5 V;

250 ns at Voo = 10 V

• Common data inputs and outputs

• Multiple-chip select inputs to simplify

memory system expansion

The RCA-CDP1823 and CDP1823C are 128-word by 8-bit

CMOS SOS static random-access memories. These mem-

ories are compatible with general-purpose microprocessors.

The two memories are functionally identical. They differ in

that the CDP1823 has a recommended operating voltage

range of 4 to 10.5 volts, and the CDP1823C has a

recommended operating voltage range of 4 to 6.5 volts.

The CDP1823 memory has 8 common data input and data

output terminals for direct connection to a bidirectional

data bus and is operated from a single voltage supply. Five

chip-select inputs are provided to simplify memory-system

expansion. In order to enable the CDP1823, the chip-select

inputs CS2, ~, and CS5 require a low input signal, and

the chip-select inputs CS1 and CS4 require a high input

signal.

The MRD signal enables all 8 output drivers when in the low

state and should be in a high state during a write cycle.

Aftervalid data appear althe output, the address inputs may

be changed immediately. Output data will be valid until

either theMtm signal goes high, the device is deselected, or

tM (access time) after address changes.

The CDP1823 and CDP1823C are supplied in hermetic 24-

lead dual-in-line ceramic packages (D suffix), and in 24-

lead dual-in-line plastic packages (E suffix).

OPERATIONAL MODES

Function

READ

WRITE

STAND-BY (ACTIVE)

NOT

SELECTED

MAD MWR CS1 CS2 CS3 CS4 CS5 Bus Terminal State

Storage State of

0 X 1 0 0 1 0 Addressed Word

1 0 1 0 0 1 0 Input High-Impedance

1 1 1 0 0 1 0 High-Impedance

XX0 XXXX

XXX 1 XXX

X X X X 1 X X High-Impedance

XXXXX0 X

XXXXXX 1

Logic 1 = High Legic 0 = Low X = Don't Care

File Number 1198

660 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

CDP1823 Datasheet Preview

CDP1823 Datasheet

128-Word x 8-Bit Static Random-Access Memory

No Preview Available !

_________________________ Random-Access Memories (RAMs)

CDP1823, CDP1823C

OPERATING CONDITIONS at TA = FULL PACKAGE-TEMPERATURE RANGE

For maximum reliability, nominal operating conditions should be

selected so that operation is always within the following ranges:

CHARACTERISTIC

Supply·Voltage Range

LIMITS

CDP1823D

CDP1823CD

Min.

Max.

Min.

Max.

4 10.5 4

6.5

UNITS

Recommended Input Voltage Range

VSS

VDD

VSS

VDD

MAXIMUM RATINGS, Absolute·Maximum Values:

DC SUPPLY·VOLTAGE RANGE, (VDD)

(All voltage values referenced to VSS terminal)

CDP1823 ............................................................. -0.5to +11 V

CDP1823C ............................................................. -0.5to +7V

INPUT VOLTAGE RANGE, ALL INPUTS ................................... -0.5to VDD+ 0.5 V

DCINPUTCURRENT,ANYONEINPUT ............................................. ±10mA

OPERATING·TEMPERATURE RANGE (TA):

CERAMIC PACKAGES (D SUFFIX TYPES) ................................... - 55 to + 125·C

PLASTIC PACKAGES (E SUFFIX TYPES) ..................................... - 40 to + 85·C

STORAGETEMPERATURERANGE(Tstg) ..................................... -65to +150·C

LEAD TEMPERATURE (DURING SOLDERING):

At distance 1/16 ± 1/32 inch (1.59 ± 0.79 mm) from case for 10 s max.................... + 265·C

STATIC ELECTRICAL CHARACTERISTICS at T. = -40 to + 85°C, Except as noted

TEST

CONDITIONS

LIMITS

CHARACTERISTICS

Vo V,N Voo

CDP1823

CDP1823C UNITS

(V) (V) (V) Min. Typ.· Max. Min. Typ.* MIx.

- -Quiescent Device -

0,5 5 - - 500

- 500

Current,

- - -100 0.10 10 -

1000 - -

Output Voltage:

- 0,5 5 -

-0 0.1

0 0.1

Low-Level.

- -VOL 0,10 10

0 0.1 - -

High-Level,

-VOH 0,5 5 4.9 5

- 4.9 5 -

- 0,10 10 9.9 10 -

- - - -Input Low Voltage. V,L 0.5,4.5

1.5 - 1.5

0.5,9.5 - 10 -

3-- -

Input High Voltage, V,H 0.5,4.5 -

5 3.5 -

- -3.5 -

-0.5,9.5 - 10 7

- - --

Output Low (Sink)

- -0.4 0,5 5 2 4

Current,

-10L 0.5 0,10 10 4.5 9 - - -

- -Output High (Source) 4.6 0,5 5 -1 -2

-1 -2.

Current,

10H 9.5 0,10 10 -2.2 -4.4 -

Input Current,

ioN Any 0,5 5

- ±5 - - ±5

- - - -Input 0,10 10

±10 -

3-State Output

- -0,5 0,5 5 - - ±5

±5

Leakage Current, lOUT 0,10 0,10 10 -

- -±10 - -

- -Operating Current,loo,t

0,5 5

4 8- 4 8

- -0,10 10 - 8 16 - -

Input Capacitance, C'N -

---

-5 7.5

5 7.5

pAl

Output Capacitance,

-COUT

---

10 15 - 10 15

tOutputs open cIrcuIted; cycle lIme = 1 fJs.

'Typical values are for T. = 25' C and nominal Voo.

______________________________________________________________ 661

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CDP1823 Datasheet

128-Word x 8-Bit Static Random-Access Memory

CDP1823 Datasheet

128-Word x 8-Bit Static Random-Access Memory

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