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CDM6264 Datasheet Preview

CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

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Random-Access Memories (RAMs) _______________________
CDM6264
NC
AI2
A7
A.
AS
••
A'
A2
AI
AD
1/01
1/02
I103
v••
6
10
.."12
I.
28 VDD
27 iVf
2. CE2
. .,2. A8
2.
.11
.'022 OE
21
m20
19 I/08
I. 1/07
17 I./08
I. 1/05
I. 1/04
TOP VIEW 91tS- 31209
TERMINAL ASSIGNMENT
CMOS 8192-Word by 8-Bit
LSI Static RAM
Features:
• Fully static operation
• Single power supply: 4.5 V to 5.5 V
• All inputs and outputs directly TTL
compatible
• Industry standard 2B-pin configuration
• Input address buffers gated off
with chip disable
• 3-state outputs
The RCA-CDM6264 is a 8192-word by B-bit static random-
access memory. It is designed for use in memory systems
where high-speed. low power and simplicity in use are
desirable. This device has common data input and data
output and utilizes a single power supply of 4.5 V to 5.5 V.
Either chip enable (00 or CE2). when not valid. will gate off
the address and output buffers and power down the chip to
minimum standby power with inputs toggling. The output
enable (OE) controls the. output buffers to eliminate bus
contention.
The CDM6264 is supplied in a 28-lead dual-in-line plastic (E
suffix) package.
AI2
All
A,AID
A. INPUT
ADDRESS
XV
DECODE
aUFFERS
A7
A'
..A.
A'
A'
AI
AO ENABLE
256. US
MEMORY
MATRIX
INPUTI
OUTPUT
DATA
BUFFERS
1/0'8
1/07
1/06
1/05
I104
1/03
1./02
:t/01
CiT
......-.-0 "'DO
CE' c~~~~gL 1-_ _ _ _ _ _ _ _ _ _ _ _--' 4-----0 Vss
Wi
9ZCIII-57210
0[
Fig. 1 - Functional block diagram.
CDM6284-3 FDM6264-21
Access Time (max)
150 ns
200 ns
Output Enable Time
(max.)
70 ns
70 n.
Operating Current
(max.)
45mA
45mA
Standby Current
100., (max.)
100pA 200pA
Operating Temp.
O·C to -40·C to
Range:
+70·C
+85·C
Data Retention Voltage:
O°CST",S+70°C
O°C::S; TA S +85°C
-40°CST",<0°C
2V min
-
-
-
2Vmin
4Vmin.
TRUTH TABLE
CE1 CE2 OE WE
H
X
L
L
-L
L - LOW
XX X
LXX
HLH
HXL
HH H
H - HIGH X - H OR L
AOTOA12
X
X
STABLE
STABLE
STABLE
MODE
NOT SELECTED
NOT SELECTED
READ
WRITE
OUTPUT DISABLE
DATA 110
HIGHZ
HIGHZ
DATA OUT
DATA IN
HIGHZ
DEVICE
CURRENT
STANDBY
STANDBY
ACTIVE
ACTIVE
ACTIVE
File Number 1505
M2 ____________________________________________________________




GE

CDM6264 Datasheet Preview

CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

No Preview Available !

_______________________Random-Access Memories (RAMs)
CDM6264
MAXIMUM RATINGS, Absolute-Maximum Values:
DC SUPPLY-VOLTAGE RANGE, (Voo):
(Voltage referenced to Vss terminal) ................. : ................................................................-0.3 to +7 V
INPUT VOLTAGE RANGE, ALL INPUTS ................................................................................-0.3 to +7 V
POWER DISSIPATION PER PACKAGE (Po):
For T. " -40' to +60' C .................................................................................................. 500 mW
For T. " +60' to +85' C ..................................................................... Derate linearly at 8 mWI'C to 300 mW
DEVICE DISSIPATION PER OUTPUT TRANSISTOR
For T." FULL PACKAGE-TEMPERATURE RANGE ....................................................................... 100 mW
OPERATING-TEMPERATURE RANGE (T.):
CDM6264-3 ....................................................................................................... 0' to+70'C
CDM6264-21. .................................................................................................... -40' to +85' C.
STORAGE TEMPERATURE RANGE (T..,) ............................................................................ -55 to +125'C,
LEAD TEMPERATURE (DURING SOLDER!NG):
At distance 1/16 ± 1/32 in. (1.59 ± 0.79 mm) from case for 10 s max. . .................................................... +265'C
OPERATING CONDITIONS at T." 0° to +70°C (CDM6264-3); T. = _40' to +85'C (CDM6264-2I)
For maximum reliability, operating conditions should be selected so that operallon Is always within the following ranges:
CHARACTERISTIC
DC Operating Voltage Range
Input Voltage Range
Input Signal Rise or Fall Timet.
LIMITS
ALL TYPES
MIN.
MAX.
4.5 5.5
UNITS
V,H 2.2 Vee + 0.3
V
V'L -0.3
tr,tf -
0.8
5
fJs
t.lnput signal rise and fall times with a duration groater than the maximum value can cause loss of stored data
In the selected mode.
STATIC ELECTRICAL CHARACTERISTICS at T. = 0' to +70°C (CDM6264-3); T. = _40° to +85°C (CDM6264-2l),
Voe = 5 V ± 10%, Except as noted
CHARACTERISTIC
Standby Device Current
Output Voltage Low
Level
Output Voltage High
Level
Input Leakage Current
3-State Output Leakage
Current
Operating Device
Current
loos
Joos 1
VOL Max.
VOH Min.
liN Max.
lOUT
IOPER1#
IOPER2#
Input Capacitance
Output Capacitance
C 'N
CliO
CONDITIONS
CE1=V'H or CE2=V'L
CE1=CE2 ~ Vee-0.2 Vor
CE2 < 0.2 V
IOL=2.1 rnA
10L-l fJA
10H=-1 rnA
10H=-1 fJA
V'N=O V to Vee
V'/0=0 V to Voo
LIMITS
CDM6264-3
CDM6264-2l UNITS
Min. Typ." Max. Min. Typ." Max.
- 1.5 3 -
2 4 rnA
-
5 100 -
10 200 fJA
- - 0.4
- 0.1
-2.4
-
-
- Voe-O.l -
- ±0.1 ±2
- ±0.5 ±2
- - 0.4
- 0.1 -
2.4 -
-
- -Vee·O.l
- ±0.1 ±2
- ±0.5 ±2
V
fJA
V,N=V'L, V,H
tc,e=1 fJS
te,e=min. cycle time
V'N=0.2 V,
te,e=1 fJS
Voe-0.2 V te,e=min. cycle time
V,N=O V, 1"1 MHz, TA=25° C
V'(O=O V. 1=1 MHz, TA=25° C
-
-
-
-
-
-
4.5 9 -
-22.5 45
2 4-
20 40 -
4 6-
6 8-
7.5
22.5
5
20
4
6
15
45
10
40
6
8
rnA
pF
"Typical values are for T.=25'C and nominal Voo.
#Outputs open circuited.
______________________________________________________________ 643


Part Number CDM6264
Description CMOS 8192-Word by 8-Bit LSI Static RAM
Maker GE
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CDM6264 Datasheet PDF






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