CDM6264 Datasheet Preview

CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

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Random-Access Memories (RAMs) _______________________

CDM6264

AI2

••

1/01

1/02

I103

v••

••

.."12

28 VDD

27 iVf

2. CE2

. .,2. A8

.11

.'022 OE

m20

19 I/08

I. 1/07

17 I./08

I. 1/05

I. 1/04

TOP VIEW 91tS- 31209

TERMINAL ASSIGNMENT

CMOS 8192-Word by 8-Bit

LSI Static RAM

Features:

• Fully static operation

• Single power supply: 4.5 V to 5.5 V

• All inputs and outputs directly TTL

compatible

• Industry standard 2B-pin configuration

• Input address buffers gated off

with chip disable

• 3-state outputs

The RCA-CDM6264 is a 8192-word by B-bit static random-

access memory. It is designed for use in memory systems

where high-speed. low power and simplicity in use are

desirable. This device has common data input and data

output and utilizes a single power supply of 4.5 V to 5.5 V.

Either chip enable (00 or CE2). when not valid. will gate off

the address and output buffers and power down the chip to

minimum standby power with inputs toggling. The output

enable (OE) controls the. output buffers to eliminate bus

contention.

The CDM6264 is supplied in a 28-lead dual-in-line plastic (E

suffix) package.

AI2

All

A,AID

A. INPUT

ADDRESS

DECODE

aUFFERS

..A.

AO ENABLE

256. US

MEMORY

MATRIX

INPUTI

OUTPUT

DATA

BUFFERS

1/0'8

1/07

1/06

1/05

I104

1/03

1./02

:t/01

CiT

......-.-0 "'DO

CE' c~~~~gL 1-_ _ _ _ _ _ _ _ _ _ _ _--' 4-----0 Vss

9ZCIII-57210

Fig. 1 - Functional block diagram.

CDM6284-3 FDM6264-21

Access Time (max)

150 ns

200 ns

Output Enable Time

(max.)

70 ns

70 n.

Operating Current

(max.)

45mA

Standby Current

100., (max.)

100pA 200pA

Operating Temp.

O·C to -40·C to

Range:

+70·C

+85·C

Data Retention Voltage:

O°CST",S+70°C

O°C::S; TA S +85°C

-40°CST",<0°C

2V min

2Vmin

4Vmin.

TRUTH TABLE

CE1 CE2 OE WE

-L

L - LOW

XX X

LXX

HLH

HXL

HH H

H - HIGH X - H OR L

AOTOA12

STABLE

MODE

NOT SELECTED

READ

WRITE

OUTPUT DISABLE

DATA 110

HIGHZ

DATA OUT

DATA IN

HIGHZ

DEVICE

CURRENT

STANDBY

ACTIVE

File Number 1505

M2 ____________________________________________________________

CDM6264 Datasheet Preview

CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

No Preview Available !

_______________________Random-Access Memories (RAMs)

CDM6264

MAXIMUM RATINGS, Absolute-Maximum Values:

DC SUPPLY-VOLTAGE RANGE, (Voo):

(Voltage referenced to Vss terminal) ................. : ................................................................-0.3 to +7 V

INPUT VOLTAGE RANGE, ALL INPUTS ................................................................................-0.3 to +7 V

POWER DISSIPATION PER PACKAGE (Po):

For T. " -40' to +60' C .................................................................................................. 500 mW

For T. " +60' to +85' C ..................................................................... Derate linearly at 8 mWI'C to 300 mW

DEVICE DISSIPATION PER OUTPUT TRANSISTOR

For T." FULL PACKAGE-TEMPERATURE RANGE ....................................................................... 100 mW

OPERATING-TEMPERATURE RANGE (T.):

CDM6264-3 ....................................................................................................... 0' to+70'C

CDM6264-21. .................................................................................................... -40' to +85' C.

STORAGE TEMPERATURE RANGE (T..,) ............................................................................ -55 to +125'C,

LEAD TEMPERATURE (DURING SOLDER!NG):

At distance 1/16 ± 1/32 in. (1.59 ± 0.79 mm) from case for 10 s max. . .................................................... +265'C

OPERATING CONDITIONS at T." 0° to +70°C (CDM6264-3); T. = _40' to +85'C (CDM6264-2I)

For maximum reliability, operating conditions should be selected so that operallon Is always within the following ranges:

CHARACTERISTIC

DC Operating Voltage Range

Input Voltage Range

Input Signal Rise or Fall Timet.

LIMITS

ALL TYPES

MIN.

MAX.

4.5 5.5

UNITS

V,H 2.2 Vee + 0.3

V'L -0.3

tr,tf -

0.8

fJs

t.lnput signal rise and fall times with a duration groater than the maximum value can cause loss of stored data

In the selected mode.

STATIC ELECTRICAL CHARACTERISTICS at T. = 0' to +70°C (CDM6264-3); T. = _40° to +85°C (CDM6264-2l),

Voe = 5 V ± 10%, Except as noted

CHARACTERISTIC

Standby Device Current

Output Voltage Low

Level

Output Voltage High

Level

Input Leakage Current

3-State Output Leakage

Current

Operating Device

Current

loos

Joos 1

VOL Max.

VOH Min.

liN Max.

lOUT

IOPER1#

IOPER2#

Input Capacitance

Output Capacitance

C 'N

CliO

CONDITIONS

CE1=V'H or CE2=V'L

CE1=CE2 ~ Vee-0.2 Vor

CE2 < 0.2 V

IOL=2.1 rnA

10L-l fJA

10H=-1 rnA

10H=-1 fJA

V'N=O V to Vee

V'/0=0 V to Voo

LIMITS

CDM6264-3

CDM6264-2l UNITS

Min. Typ." Max. Min. Typ." Max.

- 1.5 3 -

2 4 rnA

5 100 -

10 200 fJA

- - 0.4

- 0.1

-2.4

- Voe-O.l -

- ±0.1 ±2

- ±0.5 ±2

- - 0.4

- 0.1 -

2.4 -

- -Vee·O.l

- ±0.1 ±2

- ±0.5 ±2

fJA

V,N=V'L, V,H

tc,e=1 fJS

te,e=min. cycle time

V'N=0.2 V,

te,e=1 fJS

Voe-0.2 V te,e=min. cycle time

V,N=O V, 1"1 MHz, TA=25° C

V'(O=O V. 1=1 MHz, TA=25° C

4.5 9 -

-22.5 45

2 4-

20 40 -

4 6-

6 8-

7.5

22.5

rnA

"Typical values are for T.=25'C and nominal Voo.

#Outputs open circuited.

______________________________________________________________ 643

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CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

CDM6264 Datasheet

CMOS 8192-Word by 8-Bit LSI Static RAM

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