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CDM6116A Datasheet Preview

CDM6116A Datasheet

CMOS 2048-Word by 8-Bit Static RAM

No Preview Available !

Random-Acee.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM6116A
Product Preview
A7 24 Vee
AS 23 A8
A5 3
A4 4
22 A9
21 WE
A3 20 OE
A2 S
AI 7
19 AIO
18 CE
AO 8
17 :t/08
:t/01
9
16 I107
:t/02
10
15 :1:/06
:t/03
II
14 :t/05
vss 12
13 I104
TOP VIEW
92CS-36942
TERMINAL ASSIGNMENT
CMOS 2048-Word by 8-Bit
Static RAM
Features:
• Fully static operation
• Single power supply: 4.5 Vt05.5 V
• All inputs and outputs directly TTL compatible
• 3-state outputs
• Industry standard 24-pin configuration
• Chip-enable gates address buffers for minimum standby current
• Data retention voltage: 2 V min.
The RCA-COM6116A Is a CMOS 2048-word by 8-bit static
random-access memory. It is designed for use in memory
systems where high-speed, low power and simplicity In use
are desirable. This device has common data inputs and data
outputs and utilizes aslngle power supply of 4.5 V to 5.5 V. A
chip-enable Input and an output-enable input are provided
for memory expansion and output buffer control.
The chip enable (CE) gates the address and output buffers
and powers down the chip to the low power standby mode.
The output enable (CE) controls the output buffers to
eliminate bus contention.
The COM6116A-2 and COM6116A-3 are supplied in a 24-
lead dual-In-line plastic package (E suffix). The COM-
6116A-9lssupplied in a 24-lead dual-in-line plastic package
(E suffix) and a 24-lead dual-in-line side-brazed ceramic
package (0 suffix).
Access Time (max.)
Output Enable Time (max.)
Operating Temperature
Operating Current (max.)
Standby Current
loos, (max.)
CDM6116A-2ICDM6116A-3 CDM6116A-9
200 ns I 150 ns
250 ns
120 ns I 60 ns
150 ns
0° to +70°C
40° to +85° C
35 mA I 35mA
40mA
I30llA
50llA
100 llA
OPERATING CONDITIONS at TA = 0 to +70·C, (CDM6116A-2, CDM6116A-3); TA = _40° to +85°C (CDM6116A-9)
For maximum reliability, operating conditions should be lelected so that operation Is always within the following ranges:
CHARACTERISTIC
DC Operating Voltage Range
Input Voltage Range
Input Signal Rise or Fall Time I:J.
LIMITS
ALL TYPES
MIN.
MAX.
4.5 5.5
V'H 2.2 Voo + 0.3
V'L -0.3
-tr,t,
0.8
5
A Input signal rise and fall tim8s longer than the maximum value can cause loss of stored data in the selected mode.
UNITS
V
JIS
File Number 1472
636 __________________________________________




GE

CDM6116A Datasheet Preview

CDM6116A Datasheet

CMOS 2048-Word by 8-Bit Static RAM

No Preview Available !

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Random-Acce.. Memories (RAMs)
CDM6116A
AI
A9
A8
A7 INPUT
AS ADDRESS
A5 BUFFERS
A4
A3
A2
AI
AO
XY
DECODE
12el12e
MEMORY
MATRIX
OUTPUT
DATA
BUFFERS
1/08
r.l07
I/08
I/05
I/04
I103
I/02
I/O I
CE - V D D
WE -VSS
~
92CM-!l6943
Fig. 1 - Functlona' block diagram.
TRUTH TABLE
Ci Oi WE
HXX
L LH
LHL
LLL
L = LOW H = HIGH X = H or L
AOTOA10
X
STABLE
STABLE
STABLE
MODE
NOT SELECTED
READ
WRITE
WRITE
1/01 TO 1/08
HIGHZ
DATA OUT
DATA IN
DATA IN
DEVICE
CURRENT
STANDBY
ACTIVE
ACTIVE
ACTIVE
MAXIMUM RATINGS, Absolute-Maximum Ratings
DC SUPPLY-VOLTAGE RANGE, (Voo):
(Voltage referenced to V•• lerminal) ..................................................................................-0.3 to +7 V
INPUT VOLTAGE RANGE, ALL INPUTS ................................................................................-0.3 to +7 V
DC INPUT CURRENT, ANY ONE INPUT •..•••.•.•••••••.••••.••..••.•.•••••••••••.••••••••••••••••••...••.••••.•.••••..... ±10 mA
POWER DISSIPATION PER PACKAGE (Po):
For T. = -40· to +60. C (PACKAGE TYPE E) .............................................................................. 500 mW
ForT. = +60· to +65·C (PACKAGE TYPE E) ................................................. Derate Linearly at 8 mW/·C to 300 mW
For T. = -40· 10 +85. C (PACKAGE TYPE D) .............................................................................. 500 mW
DEVICE DISSIPATION PER OUTPUT TRANSISTOR
ForT. = FULL PACKAGE-TEMPERATURE RANGE (All Peckage Types) ................................................... 100 mW
OPERATING-TEMPERATURE RANGE (T.)
CDM6116A-2, CDM6116A-3 (PACKAGE TYPE E) ...................................................................... 0 to +70·C
CDM6116A-9 (PACKAGE TYPES 0, E) .............................................................................. -4010 +65·C
STORAGE TEMPERATURE RANGE (T...) ...•••••..•.••••••....•••••.••..••••••.•••••••...•••.•••.•••••.•.•••••.••..• -55 to +125·C
LEAD TEMPERATURE (DURING SOLDERING):
AI distance 1/16 ± 1/32 In. (1.59 ± 0.79 mm) from case for 10 s max. .. ................................................... +265·C
____________________________________________________________ 637


Part Number CDM6116A
Description CMOS 2048-Word by 8-Bit Static RAM
Maker GE
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CDM6116A Datasheet PDF






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