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CDM53256 Datasheet Preview

CDM53256 Datasheet

CMOS 32768-Word by 8-Bit LSI Static ROM

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Read-Only Memories (ROMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDM53256
NC 28 VOO
AI2 27 AI4
A7 26 AI3
A6 4
25 A8
AS 5
24 A9
A4 6
23 All
A3
A2 8
22 <iE/OE
21 AIO
AI 9
20 CE/CE
AO 10
00 II
01 12
19 07
18 06
17 OS
02 13
16 04
VSS
14
15 03
TOP VIEW
92CS-36Z24
TERMINAL ASSIGNMENT
CMOS 32,768-Word by 8-Bit LSI Static ROM
Features:
• Asynchronous operation
• Fast access time - 250 ns max.
• Low standby and operating power-
IS8Y2 = 2/iA typical
IOPER> = 12 mA max. at te,e = 1 /is
= 36 mA max. at te,e = 250 ns
• Automatic power down
• Mask-programmable chip enable and output enable
• TTL input and output compatible
• 28-pin JEDEC standard pin out: Pin compatible with the 27256 EPROM
The RCA-COM53256 is a 262,144-bit asynchronous mask-
programmble, CMOS REAO-ONLY memory organized as
32,768 eight-bit words. The COM53256 is designed to be
used with a wide rangeof general-purpose microprocessor
systems, including the RCA COP1800 series system. One
chip enable input and an output enable function are
provided for memory expansion and output buffer control.
Chip enable (CE) gates the address and output buffers and
powers down the chip to the standby mode. The output
enable (OE) controls the output buffers to eliminate bus
contention. The polarities of the chip enable and the output
enable are user mask-programmble.
The COM53256 is supplied in 28-lead, hermetic, dual-in-
line side-brazed ceramic (0 suffix). in 28-lead dual-in-line
plastic (E suffix) and in 28-lead small-outline (SO) plastic
(M suffix) packages.
AI4
I
I
I
I
I 262,144 BIT
I ROM
I 'a": CELL ARRAY
A3 '"0"
0
..A2
"'"
''a'""":
"AI 0
AO
CE/CE
ACTIVITY
DETECTOR
(AUTO POWER)
DOWN
**OE/CE -----------------;
* MASK PROGRAMMABLE AS'
ACTIVE-HIGH OR ACTIVE- LOW OR DON'T CARE
** MASK PROGRAMMABLE AS
ACTlVE- HIGH OR ACTIVE-LOW
00 a' 02 03
Fig. 1 - Functional block diagram.
04 05
06 07
92.Cl'ot-36246
File Number 1453
722 _________________________________________________________________




GE

CDM53256 Datasheet Preview

CDM53256 Datasheet

CMOS 32768-Word by 8-Bit LSI Static ROM

No Preview Available !

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Read-Only Memories (ROMs)
CDM53256
MAXIMUM RATINGS, Absolute-Maximum Values:
DC SUPPLY-VOLTAGE RANGE, (Voo)
(Voltage referenced to Vss terminal) ..................................................................... -0.5 to +7V
INPUT VOLTAGE RANGE, ALL INPUTS ........................................................... -0.5 to Voo +0.5 V
DC INPUT CURRENT, ANY ONE INPUT .................................................................... ±10 mA
POWER DISSIPATION PER PACKAGE (Po):
For TA = -40 to +60° C (PACKAGE TYPE E) .............................................................. 500 mW
=For TA +60 to +85°C (PACKAGE TYPE E) ................................. Derate Linearly at 8 mW/oC to 300 mW
=For TA -55 to +100°C (PACKAGE TYPE D) ............................................................. 500 mW
For TA ,= +100 to +125°C (PACKAGE TYPE D) ............................... Derate Linearly at 8 mW/oC to 300 mW
=For TA -40 to +85°C (PACKAGE TYPE M)" ............................................................. 425 mW
DEVICE DISSIPATION PER OUTPUT TRANSISTOR
For TA = FULL PACKAGE-TEMPERATURE RANGE (All Package Types) .................................... 100 mW
OPERATING-TEMPERATURE RANGE (TA):
PACKAGE TYPE D ............................................................................... -55 to +125° C
PACKAGE TYPE E and M .......................................................................... -40 to +85°C
STORAGE-TEMPERATURE RANGE (T".) ............................................................. -65 to +150°C
LEAD TEMPERATURE (DURING SOLDERING):
At distance 1/16 ± 1/32 in. (1.59 ± 0.79 mm) from case for 10 s maximum .................................... +265°C
'Printed-clrcUit board mount: 57 mm x 57 mm minimum area x 1.6 mm th,ck Gl 0 epoxy glass, or equivalent.
RECOMMENDED OPERATING CONDITIONS at TA = -40 to +85°C
For maximum reliability, nominal operating conditions should be selected so that operation Is always within the
following ranges:
CHARACTERISTIC
LIMITS
Min, Max,
DC Operating Voltage Range
Input Voltage Range
46
Vss Voo
STATIC ELECTRICAL CHARACTERISTICS at TA = -40 to +85°C, Voo = 5 V ± 10%, Except as noted
UNITS
V
CHARACTERISTIC
CONDITIONS
LIMITS
ALL TYPES
UNITS
Min, Typ.- Max.
Average Operating Device Currenta
DC Active Device Currentb
Standby Device CurrentC
10PERl d
IOPER2e
IACTl d
IACT2e
ISBYl d
ISBY2e
'!!!:!...= VIL, VIH, CE =VIH,
(CE =VIL)
teye = 1 JJS
teye =250 ns
VIN =0 2 V, Voo -0.2 V;
CE =Voo -0 2 V;
(CE =0.2 V) tcyc =1 JJS
teye =250 ns
VIN =VIL, VIH; CE =VIH,
(CE =VIL)
VIN =0 2 V, Voo -0.2 V;
CE =Voo -0 2 V,
(CE =0 2 V)
VIN =VIL, VIH, CE =VIL.
(CE =VIH)
VIN =0 2 V. Voo -02 V;
CE =0.2 V.
(CE =Voo -0.2 V)
-
-
-
-
-
-
-
-
- 16
- 40 mA
- 12
- 36
- 15 mA
- 50 pA
- 1.5 mA
2 50 pA
Output Voltaae Low-Level
Output Voltaae Hiah-Level
Input Low Voltaae
InDut Hiah Voltaae
Input Leakaae Current (Anv I~ut)
3-State Output Leakage Current
Input Capacitance
Output Capacitance
VOL
VOH
VIL
VIH
liN
lOUT
CIN
COUT
10L =3.2 mA
10H =-3.2 mA
-
-
Vss < VIN -< Voo
VSS < VOUT < Voo
f= 1 MHz, TA= 25°C
f - 1 MHz, TA =25°C
- - 0.4
2.4 -
--
-
0.8 V
2.2 -
-
-
-
-
-
±1 pA
±1
-
-
5 10 pF
6 12
-TYPical values are forTA = 25°C and nominal Voo.
Clndependent of address input activity, chip disabled.
aAddress inputs toggling, chip enabled, outputs open circuit.
dTTL inputs.
_bl_np_u_ts_st_ab_le_, c_h_ip_en_a_bl_ed_, o_u_tp_ut_s _op_en_c_ir_cu_it.___________e_CM_O_S_in_p_ut_s. _________________ 723


Part Number CDM53256
Description CMOS 32768-Word by 8-Bit LSI Static ROM
Maker GE
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CDM53256 Datasheet PDF






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