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MB84VD23381HJ - 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

Features

  • Power Supply Voltage of 2.7 V to 3.1 V.
  • High Performance 70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM).
  • Operating Temperature.
  • 30 °C to +85 °C.
  • Package 56-ball BGA s.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-50312-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64M (×16) FLASH MEMORY & 16M (×16) Mobile FCRAMTM MB84VD23381HJ-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM) • Operating Temperature –30 °C to +85 °C • Package 56-ball BGA s PRODUCT LINEUP Flash Supply Voltage (V) Max Random Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) +0.1 V VCCf* = 3.0 V –0.3 V 70 70 30 * : Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 56-ball plastic FBGA (Continued) FCRAM +0.1 V VCCr* = 3.0 V –0.
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