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MB84VD23381EF - Flash Memory / SRAM

Description

Pin Configuration Pin A19 to A0 A21, A20 DQ15 to DQ0 CEf CE1s CE2s OE WE RY/BY UBs LBs RESET WP/ACC N.C.

Features

  • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM.
  • Power Supply Voltage of 2.7 V to 3.3 V for Flash.
  • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) (Continued) s.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 16 M (×16) Mobile FCRAMTM MB84VD23381EF-85 s FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) (Continued) s PRODUCT LINE UP Flash Memory VCCf = 2.7 V to 3.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 85 85 35 FCRAM* VCCs = 2.7 V to 3.0 V 85 85 60 * : Both VCCf and VCCs must be the same level when either part is being accessed and VCCf can be 2.4 V during standby state. s PACKAGE 101-ball plastic FBGA (BGA-101P-M01) www.DataSheet4U.
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