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MB84VD23280EE - 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

This page provides the datasheet information for the MB84VD23280EE, a member of the MB84VD23280EA 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM family.

Description

Pin name A18 to A0 A21 to A19, A

1 SA DQ15 to DQ0 CEf CE1s CE2s OE WE RY/BY UBs LBs CIOf CIOs RESET WP/ACC N.C.

Power Power Power Address Inputs (Common) Address Inputs (Flash) Address Input (SRAM) Data Inputs/Outputs (C

Features

  • Power supply voltage of 2.7 V to 3.3 V.
  • High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM).
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 101-ball BGA (Continued) s.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 64M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 s FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –25 °C to +85 °C • Package 101-ball BGA (Continued) s PRODUCT LINEUP Flash Memory –85 Power Supply Voltage (V) Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) VCCf* = 3.0 V 85 85 35 –90 +0.3V –0.3 V SRAM VCCs* = 3.0 V +0.3V –0.3 V 90 90 70 70 35 *: Both VCCf and VCCs must be in recommended operation range when wither part is being accessed.
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