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MB84VD2119xA - (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM

This page provides the datasheet information for the MB84VD2119xA, a member of the MB84VD2118xA (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM family.

Description

) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Eight 4 K words and thirty

Features

  • Power supply voltage of 2.7 V to 3.6 V.
  • High performance 85 ns maximum access time.
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s.

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Datasheet preview – MB84VD2119xA

Datasheet Details

Part number MB84VD2119xA
Manufacturer Fujitsu Semiconductor Limited
File Size 880.07 KB
Description (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
Datasheet download datasheet MB84VD2119xA Datasheet
Additional preview pages of the MB84VD2119xA datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M ( × 8/ × 16) FLASH MEMORY & 4M ( × 8/ × 16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 s FEATURES • Power supply voltage of 2.7 V to 3.6 V • High performance 85 ns maximum access time • Operating Temperature −25 °C to +85 °C • Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf*, VCCs* = 3.0 V +0.6 V −0.3 V SRAM MB84VD2118XA-85/MB84VD2119XA-85 85 85 35 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) *: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.
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