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MB84VD2009 - (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

This page provides the datasheet information for the MB84VD2009, a member of the MB84VD2008 (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM family.

Features

  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 20 to +85°C.
  • FLASH MEMORY.
  • Simultaneous operations Read-while Erase or Read-while-Program.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Bo.

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Datasheet Details

Part number MB84VD2009
Manufacturer Fujitsu Semiconductor Limited
File Size 424.71 KB
Description (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
Datasheet download datasheet MB84VD2009 Datasheet
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  • MB84VD2118xA - (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
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  • MB84VD2208xEA - (MB84VD2208xEA / MB84VD2209xEA) 32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM

Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
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