Description
CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed.
Features
- Technology : 90 nm Si gate CMOS 7- to 10-metal layers. Low-K (low permittivity) material is used for all dielectric inter-layers. Three different types of core transistors (low leak, standard, and high speed) can be used on the same chip. The design rules comply with industry standard processes. Power supply voltage : +1.2 V ± 0.1 V (standard) Operation junction temperature :.
- 40 °C to + 125 °C (standard) Gate delay time : tpd = 12 ps (1.2 V, Inverter, F/O = 1) Gate power cons.
CS101_FujitsuMediaDevices.pdf
