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MBM29LV016B-12 - 16M (2M x 8) BIT FLASH MEMORY

Download the MBM29LV016B-12 datasheet PDF. This datasheet also covers the MBM29LV016B variant, as both devices belong to the same 16m (2m x 8) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 80 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV016B_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased.
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