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MBM29LV008TA-90 - 8M (1M x 8) BIT FLASH MEMORY

Download the MBM29LV008TA-90 datasheet PDF. This datasheet also covers the MBM29LV008BA variant, as both devices belong to the same 8m (1m x 8) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Single 3.0 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN.
  • Normal Bend Type, PTR.
  • Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV008BA_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M × 8) BIT DS05-20858-4E MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes Any combination of sectors can be concurrently erased.
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