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FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
8M (1M × 8) BIT
DS05-20858-4E
MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
• Minimum 100,000 program/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes Any combination of sectors can be concurrently erased.