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MB8508S064CF-100L - 8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM

Download the MB8508S064CF-100L datasheet PDF. This datasheet also covers the MB8508S064CF-100 variant, as both devices belong to the same 8 m x 64 bit synchronous dynamic ram so-dimm family and are provided as variant models within a single manufacturer datasheet.

General Description

The Fujitsu MB8508S064CF is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eight MB81F641642C devices which organized as two banks of 8 M × 8 bits and a 2K-bit serial EEPROM on a 144-pin glass-epoxy substrate.

Key Features

  • a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB8508S064CF is optimized for those.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB8508S064CF-100-Fujitsu.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET To Top / Lineup / Index DS05-11148-1E MEMORY Un-buffered 8 M × 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8508S064CF-100/-100L 144-pin, 2 Clock, 2-bank, based on 4 M × 16 Bit SDRAMs with SPD s DESCRIPTION The Fujitsu MB8508S064CF is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eight MB81F641642C devices which organized as two banks of 8 M × 8 bits and a 2K-bit serial EEPROM on a 144-pin glass-epoxy substrate. The MB8508S064CF features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.