FLU17XM Datasheet | Fujitsu Semiconductor Limited

FEATURES - High Output Power: P1d B=32.5d Bm (Typ.) - High Gain: G1d B=13.5d B (Typ.) - High PAE: ηadd=46% (Typ.) - Hermetic Metal/Ceramic (SMT) Package - Tape and Reel Available L-Band Medium & High Power Ga As FET DESCRIPTION The FLU17XM is a Ga As FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage Gate-Source Voltage Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain - source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 m A respectively with gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. 15 -5 7.5 -65 to +175 +175 V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Limits Min. Typ. Max. Unit Drain Current Transconductance IDSS gm VDS = 5V, VGS=0V VDS = 5V, IDS=400m A - 600...