FLL410IK-4C fet equivalent, l-band high power gaas fet.
High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=11.5dB(Typ.) High PAE: ηadd=44%(Typ.) Broad Band: 3.4~3.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-4C i.
as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent.
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4
– 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 270.24KB)