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FMV12N60ES Datasheet, Fuji Electric

FMV12N60ES mosfet equivalent, n-channel silicon power mosfet.

FMV12N60ES Avg. rating / M : 1.0 rating-11

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FMV12N60ES Datasheet

Features and benefits

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switchi.

Application

Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Charact.

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak D.

Image gallery

FMV12N60ES Page 1 FMV12N60ES Page 2 FMV12N60ES Page 3

TAGS

FMV12N60ES
N-CHANNEL
SILICON
POWER
MOSFET
Fuji Electric

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