Datasheet4U Logo Datasheet4U.com

FMH23N60E - N-CHANNEL SILICON POWER MOSFET

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op

Key Features

  • Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMH23N50E N-Channel MOSFET INCHANGE
FMH20N50E N-Channel MOSFET INCHANGE
FMH20N60S1 N-Channel MOSFET INCHANGE
FMH-12R Ultra-Fast-Recovery Rectifier Diodes Sanken electric
FMH07N90E N-Channel MOSFET INCHANGE

Other Datasheets by Fuji Electric

Part Number Description
FMH23N60ES N-CHANNEL SILICON POWER MOSFET
FMH23N50E N-CHANNEL SILICON POWER MOSFET
FMH23N50ES N-CHANNEL SILICON POWER MOSFET
FMH20N50E N-CHANNEL SILICON POWER MOSFET
FMH20N50ES N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr FMH23N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.