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Fuji Electric

ESAD39M Datasheet Preview

ESAD39M Datasheet

FAST RECOVERY DIODE

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ESAD39M(C,N,D) (10A) (400V to 600V / 10A)
FAST RECOVERY DIODE
Outline drawings, mm
15.5 ±0.3
ø3.2 ±0.2
5.5 ±0.3
3.2 +0.3
Features
Insulated package by fully molding
Super high speed switching
Low VF in turn on
High reliability
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
2.1±0.3
5.45 ±0.2
1.6 ±0.3
+0.2
1.1 —0.1
5.45 ±0.2
0.6 +0.2
3.5 ±0.2
JEDEC
EIAJ
1. Gate
2. Drain
3. Source
Connection diagram
ESAD39M- C
1
2
ESAD39M- N
1
2
ESAD39M- D
1
2
3
3
3
Rating
-04 -06
400 600
Unit
V
Non-repetitive peak reverse voltage VRSM
400 600
V
Isolating voltage
Viso Terminals-to-case, AC. 1min.
1500
V
Average output current
IO Square wave, duty=1/2, Tc=85°C
10*
A
Surge current
IFSM Sine wave 10ms
50 A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
*Average forward current of centertap full wave connection
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VFM IFM=4A
2.5 V
Reverse current
IRRM
VR=VRRM
100 µA
Reverse recovery time
t rr IF=0.1A, IR=0.2A, Irec=0.05A
50
ns
Thermal resistance
Rth(j-c)
Junction to case
2.5 °C/W




Fuji Electric

ESAD39M Datasheet Preview

ESAD39M Datasheet

FAST RECOVERY DIODE

No Preview Available !

(400V to 600V / 10A )
Characteristics
Forward characteristics
30
ESAD39M(C,N,D)(10A)
Reverse characteristics
10
5
IF 3
[A]
1
0.5
0.3
0.1
0
24
VF [V]
6
100
IR
10
[µA]
1
0.1
0
200 400
VR [V]
600
Forward power dissipation
20
15
WF 10
[W]
5
0
02
46
Io [A]
8
Output current-case temperature
140
120
Tc
[°C] 100
80
60
10 0
2
46
Io [A]
8 10
Junction capacitance characteristics
100
50
30
Cj
[pF] 10
5
3
100
50
30
IFSM
[A]
10
Surge capability
1
35
10
30 50
VR [V]
100
300
5
1
35
10
[time] (at 50Hz)


Part Number ESAD39M
Description FAST RECOVERY DIODE
Maker Fuji Electric
Total Page 3 Pages
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