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Fuji Electric

ESAC83M-004 Datasheet Preview

ESAC83M-004 Datasheet

SCHOTTKY BARRIER DIODE

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ESAC83M-004 (20A)
(40V / 20A )
SCHOTTKY BARRIER DIODE
Outline drawings, mm
15.5 ±0.3
ø3.2 ±0.2
5.5 ±0.3
3.2 +0.3
Features
Insulated package by fully molding
Low VF
Super high speed switching
High reliability by planer design
Applications
High speed power switching
2.1±0.3
5.45 ±0.2
1.6 ±0.3
+0.2
1.1 —0.1
5.45 ±0.2
0.6 +0.2
3.5 ±0.2
JEDEC
EIAJ
1. Gate
2. Drain
3. Source
Connection diagram
1 23
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
40 V
Non-repetitive peak reverse voltage VRSM
Average output current
Io
Surge current
IFSM
Operating junction temperature
Tj
tw=500ns, duty=1/40
Square wave, duty=1/2
Tc=79°C
Sine wave
10ms
48
20*
120
-40 to +150
V
A
A
°C
Storage temperature
Tstg
-40 to +150
°C
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM IFM=8A
Reverse current
IRRM
VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Max.
0.55
15
2.5
Unit
V
mA
°C/W




Fuji Electric

ESAC83M-004 Datasheet Preview

ESAC83M-004 Datasheet

SCHOTTKY BARRIER DIODE

No Preview Available !

(40V / 20A )
Characteristics
50
30
IF
[A] 10
5
3
Forward characteristics
ESAC83M-004 (20A)
Reverse characteristics
10
IR
[mA] 1
0.1
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VF [V]
0.01
0
10 20 30 40 50 60 70
VR [V]
Forward power dissipation
7.5
WF
[W] 5.0
2.5
0
0 5 10 15
Io [A]
Reverse power dissipation
20
16
WR 12
[W]
8
4
0
0 10 20 30 40 50
VR [V]
Output current-case temperature
140
Junction capacitance characteristics
3000
120
Tc
[°C ] 100
80
Cj 1000
[pF]
500
300
60
0 2 4 6 8 10 12 14 16 18 20
Io [A]
100
5 10
30 50 100
VR [V]


Part Number ESAC83M-004
Description SCHOTTKY BARRIER DIODE
Maker Fuji Electric
Total Page 3 Pages
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