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2SK3726-01MR - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200305 N-.

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Full PDF Text Transcription

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2SK3726-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200305 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS Ratings 450 Unit V Continuous drain current ID ±3 A Pulsed drain current ID(puls] ±12 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 3 A Maximum Avalanche Energy EAS *1 92.8 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt Max.
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