The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3725-01
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
200305
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Symbol VDS
Ratings 450
Unit V
Continuous drain current
ID
±3
A
Pulsed drain current
ID(puls]
±12
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
3
A
Maximum Avalanche Energy
EAS
*1
92.8
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt Max.
2SK3725-01 Datasheet
