2SK3534-01MR
2SK3534-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX
- 5 ID ID(puls] VGS IAR
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 900 900 ±7 ±28 ±30 7 269.5 40 5 2.16 80 +150 -55 to +150 2 Unit V V A A V A m J k V/µs k V/µs W
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
°C °C
- 6 k Vrms
- 1 L=10.1m H, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF< = BVDSS, Tch < = 150°C
- 4 VDS< = -ID, -di/dt=50A/µs, Vcc < = 900V
- 5 VGS=-30V
- 6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=900V VGS=0V Tch=125°C VDS=720V VGS=0V VGS=±30V VDS=0V ID=3.5A VGS=10V ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V RGS=10 Ω V CC=450V ID=7A VGS=10V L=10.1m H Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
900 3.0
Typ.
Max.
5.0 25 250 100 2.00
Units
V V µA n...