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2SK3533-01 - N-CHANNEL SILICON POWER MOSFET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3533-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS Ratings 900 Unit V VDSX *5 900 V Continuous drain current ID ±7 A Pulsed drain current ID(puls] ±28 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 7A Maximum Avalanche Energy EAS *1 269.5 mJ Maximum Drain-Source dV/dt dVDS/dt *4 40 kV/µs Peak Diode Recovery dV/dt Max.