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2SK3339-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 500 ±27 ±108 ±30 27 914 400 +150 -55 to +150 Unit V A A V A mJ W °C < *2 Tch=150°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=2.
2SK3339-01 Datasheet
