Datasheet4U Logo Datasheet4U.com

2SK3337-01 - N-CHANNEL SILICON POWER MOS-FET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SK3332 - Transistor (Sanken Electric)
  • 2SK3335 - N-Channel Silicon MOSFET (Sanyo Electric)
  • 2SK330 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3301 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3302 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3304 - N-Channel MOSFET (NEC)
  • 2SK3305 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3305 - N-Channel MOSFET (NEC)
  • 2SK3306 - N-Channel MOSFET (NEC)
  • 2SK3306 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK3337-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 1000 ±7 ±28 ±30 7 463 255 +150 -55 to +150 Unit V A A V A mJ W °C °C < *2 Tch=150°C Equivalent circuit schematic Drain(D) *1 L=17.
Published: |