2SK2018-01L

The 2SK2018-01L is N-channel MOS-FET designed by Fuji Electric.

Product Overview

Fuji Electric

Part number	2SK2018-01L
Manufacturer	Fuji Electric
File Size	214.85 KB
Description	N-channel MOS-FET
Datasheet	2SK2018-01L_FujiElectric.pdf
Additional preview pages of the 2SK2018-01L datasheet.

High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing >.

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Other Datasheets by Fuji Electric

Published: Mar 30, 2005 |