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2SK1917-MR - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1917-MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F-II SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Applications Switching regulators UPS DC-DC converters General purpose power amplifier Outline Drawings TO-220F15 2.54 JEDEC EIAJ 3. Source SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Symbol Rating Unit Drain-source voltage VDS 250 V Continuous drain current ID 10 A Pulsed drain current ID(puls] 28 A Continuous reverse drain current IDR 10 A Gate-source peak voltage VGS ±30 V Max.
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